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STPS8H100G-1 PDF预览

STPS8H100G-1

更新时间: 2024-10-31 22:06:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压高电压电源
页数 文件大小 规格书
7页 93K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS8H100G-1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
应用:HIGH VOLTAGE POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.81 VJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:250 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

STPS8H100G-1 数据手册

 浏览型号STPS8H100G-1的Datasheet PDF文件第2页浏览型号STPS8H100G-1的Datasheet PDF文件第3页浏览型号STPS8H100G-1的Datasheet PDF文件第4页浏览型号STPS8H100G-1的Datasheet PDF文件第5页浏览型号STPS8H100G-1的Datasheet PDF文件第6页浏览型号STPS8H100G-1的Datasheet PDF文件第7页 
STPS8H100D/F/G/G-1  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
8 A  
100 V  
175 °C  
0.58 V  
Tj (max)  
VF (max)  
A
A
K
K
FEATURES AND BENEFITS  
NEGLIGIBLESWITCHINGLOSSES  
HIGHJUNCTION TEMPERATURE CAPABILITY  
LOW LEAKAGE CURRENT  
TO-220AC  
STPS8H100D  
ISOWATT220AC  
STPS8H100F  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
K
AVALANCHERATED  
A
A
DESCRIPTION  
NC  
K
NC  
Schottky barrier rectifier designed for high fre-  
quency compact Switched Mode Power Sup-  
plies such as adaptators and on board DC/DC  
converters.  
I2PAK  
D2PAK  
STPS8H100G-1  
STPS8H100G  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitivepeak reverse voltage  
Value  
100  
30  
Unit  
VRRM  
V
A
A
IF(RMS) RMS forward current  
IF(AV)  
Average forward current  
TO-220AC/  
I2PAK / D2PAK  
Tc= 165°C  
8
δ
= 0.5  
ISOWATT220AC Tc = 150°C  
IFSM  
Surge non repetitiveforward  
current  
tp = 10 ms sinusoidal  
250  
A
IRRM  
IRSM  
Eas  
Repetitivepeak reverse current  
tp = 2 µs F = 1kHz square  
1
3
A
A
Non repetitive peak reverse current tp = 100 µs square  
Non repetitive avalanche energy  
Tj = 25°C  
L = 60 mH  
24  
mJ  
Ias = 2 A  
Iar  
Repetitiveavalanchecurrent  
Va = 1.5 x VR typ  
2
A
Current decayinglinearly  
µ
to 0 in 1 s  
Frequencylimited by Tj max.  
Tstg  
Tj  
Storage temperaturerange  
- 65 to + 175  
175  
°C  
°C  
Maximum operating junctiontemperature  
Critical rate of rise of rise voltage  
dV/dt  
10000  
V/µs  
August 1999 - Ed: 4A  
1/7  

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