STPS8L30

更新时间： 2024-09-26 12:04:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
7页	115K
描述
Low drop power Schottky rectifier

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STPS8L30 数据手册

STPS8L30

Low drop power Schottky rectifier

Main product characteristics

I_F(AV)

V_RRM

T_j

8 A

30 V

150° C

0.40 V

V_F(max)

Features and benefits

■ Low cost device with low drop forward voltage

for less power dissipation and reduced

heatsink

DPAK

STPS8L30B

IPAK

STPS8L30H

■ Optimized conduction/reverse losses trade-off

which leads to the highest yield in the

application

Order codes

■ High power surface mount miniature package

■ Avalanche capability specified

Part Numbers

Marking

STPS8L30B

STPS8L30B-TR

STPS8L30H

LS30

Description

Single Schottky rectifier suited to Switched Mode

Power Supplies and high frequency DC to DC

converters.

STPS8L30H

Packaged in DPAK and IPAK, this device is

especially intended for use as a Rectifier at the

secondary of 3.3 V SMPS or DC/DC units.

wheeling and polarity protection applications.

Table 1.

Symbol

Absolute Ratings (limiting values)

Parameter

Value

Unit

V_RRM

I_F(RMS)

I_F(AV)

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

Repetitive peak reverse voltage

RMS forward voltage

Average forward current

T_c= 135° C δ = 0.5

t_p= 10 ms sinusoidal

t_p= 2 µs F = 1 kHz square

t_p= 100 µs square

Surge non repetitive forward current

Peak repetitive reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

t_p= 1 µs T_j= 25° C

3000

°C

V/µs

-65 to + 150

T_j

Maximum operating junction temperature ⁽¹⁾

150

dV/dt

Critical rate of rise of reverse voltage

10000

dPtot

dTj

1. --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink

Rth(j – a)

March 2006

Rev 4

1/7

www.st.com

12 3 4 5 6 7

中文翻译

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