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STPS8H100 PDF预览

STPS8H100

更新时间: 2024-10-31 22:22:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压高电压电源
页数 文件大小 规格书
7页 93K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS8H100 数据手册

 浏览型号STPS8H100的Datasheet PDF文件第2页浏览型号STPS8H100的Datasheet PDF文件第3页浏览型号STPS8H100的Datasheet PDF文件第4页浏览型号STPS8H100的Datasheet PDF文件第5页浏览型号STPS8H100的Datasheet PDF文件第6页浏览型号STPS8H100的Datasheet PDF文件第7页 
STPS8H100D/F/G/G-1  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
8 A  
100 V  
175 °C  
0.58 V  
Tj (max)  
VF (max)  
A
A
K
K
FEATURES AND BENEFITS  
NEGLIGIBLESWITCHINGLOSSES  
HIGHJUNCTION TEMPERATURE CAPABILITY  
LOW LEAKAGE CURRENT  
TO-220AC  
STPS8H100D  
ISOWATT220AC  
STPS8H100F  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
K
AVALANCHERATED  
A
A
DESCRIPTION  
NC  
K
NC  
Schottky barrier rectifier designed for high fre-  
quency compact Switched Mode Power Sup-  
plies such as adaptators and on board DC/DC  
converters.  
I2PAK  
D2PAK  
STPS8H100G-1  
STPS8H100G  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitivepeak reverse voltage  
Value  
100  
30  
Unit  
VRRM  
V
A
A
IF(RMS) RMS forward current  
IF(AV)  
Average forward current  
TO-220AC/  
I2PAK / D2PAK  
Tc= 165°C  
8
δ
= 0.5  
ISOWATT220AC Tc = 150°C  
IFSM  
Surge non repetitiveforward  
current  
tp = 10 ms sinusoidal  
250  
A
IRRM  
IRSM  
Eas  
Repetitivepeak reverse current  
tp = 2 µs F = 1kHz square  
1
3
A
A
Non repetitive peak reverse current tp = 100 µs square  
Non repetitive avalanche energy  
Tj = 25°C  
L = 60 mH  
24  
mJ  
Ias = 2 A  
Iar  
Repetitiveavalanchecurrent  
Va = 1.5 x VR typ  
2
A
Current decayinglinearly  
µ
to 0 in 1 s  
Frequencylimited by Tj max.  
Tstg  
Tj  
Storage temperaturerange  
- 65 to + 175  
175  
°C  
°C  
Maximum operating junctiontemperature  
Critical rate of rise of rise voltage  
dV/dt  
10000  
V/µs  
August 1999 - Ed: 4A  
1/7  

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