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STPS8H100G PDF预览

STPS8H100G

更新时间: 2024-10-31 22:22:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压PC高电压电源
页数 文件大小 规格书
7页 93K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS8H100G 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-263包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.49Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:180468
Samacsys Pin Count:3Samacsys Part Category:Diode
Samacsys Package Category:OtherSamacsys Footprint Name:D2PAK-STB35NF10T4
Samacsys Released Date:2019-08-23 08:52:23Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT应用:HIGH VOLTAGE POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.81 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:250 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

STPS8H100G 数据手册

 浏览型号STPS8H100G的Datasheet PDF文件第2页浏览型号STPS8H100G的Datasheet PDF文件第3页浏览型号STPS8H100G的Datasheet PDF文件第4页浏览型号STPS8H100G的Datasheet PDF文件第5页浏览型号STPS8H100G的Datasheet PDF文件第6页浏览型号STPS8H100G的Datasheet PDF文件第7页 
STPS8H100D/F/G/G-1  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
8 A  
100 V  
175 °C  
0.58 V  
Tj (max)  
VF (max)  
A
A
K
K
FEATURES AND BENEFITS  
NEGLIGIBLESWITCHINGLOSSES  
HIGHJUNCTION TEMPERATURE CAPABILITY  
LOW LEAKAGE CURRENT  
TO-220AC  
STPS8H100D  
ISOWATT220AC  
STPS8H100F  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
K
AVALANCHERATED  
A
A
DESCRIPTION  
NC  
K
NC  
Schottky barrier rectifier designed for high fre-  
quency compact Switched Mode Power Sup-  
plies such as adaptators and on board DC/DC  
converters.  
I2PAK  
D2PAK  
STPS8H100G-1  
STPS8H100G  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitivepeak reverse voltage  
Value  
100  
30  
Unit  
VRRM  
V
A
A
IF(RMS) RMS forward current  
IF(AV)  
Average forward current  
TO-220AC/  
I2PAK / D2PAK  
Tc= 165°C  
8
δ
= 0.5  
ISOWATT220AC Tc = 150°C  
IFSM  
Surge non repetitiveforward  
current  
tp = 10 ms sinusoidal  
250  
A
IRRM  
IRSM  
Eas  
Repetitivepeak reverse current  
tp = 2 µs F = 1kHz square  
1
3
A
A
Non repetitive peak reverse current tp = 100 µs square  
Non repetitive avalanche energy  
Tj = 25°C  
L = 60 mH  
24  
mJ  
Ias = 2 A  
Iar  
Repetitiveavalanchecurrent  
Va = 1.5 x VR typ  
2
A
Current decayinglinearly  
µ
to 0 in 1 s  
Frequencylimited by Tj max.  
Tstg  
Tj  
Storage temperaturerange  
- 65 to + 175  
175  
°C  
°C  
Maximum operating junctiontemperature  
Critical rate of rise of rise voltage  
dV/dt  
10000  
V/µs  
August 1999 - Ed: 4A  
1/7  

STPS8H100G 替代型号

型号 品牌 替代类型 描述 数据表
STPS8H100G-TR STMICROELECTRONICS

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