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STPS80H100C PDF预览

STPS80H100C

更新时间: 2024-02-01 22:44:17
品牌 Logo 应用领域
其他 - ETC 高压高电压电源
页数 文件大小 规格书
4页 101K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS80H100C 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:ISOTOP包装说明:PLASTIC, ISOTOP-4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:31 weeks风险等级:2.04
Is Samacsys:N其他特性:LOW NOISE
应用:HIGH VOLTAGE POWER外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.89 V
JESD-30 代码:R-PUFM-X4JESD-609代码:e4
最大非重复峰值正向电流:700 A元件数量:2
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:40 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向电流:20 µA
反向测试电压:100 V子类别:Other Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS80H100C 数据手册

 浏览型号STPS80H100C的Datasheet PDF文件第2页浏览型号STPS80H100C的Datasheet PDF文件第3页浏览型号STPS80H100C的Datasheet PDF文件第4页 
STPS80H100CY  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
PRELIMINARY DATASHEET  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
K
IF(AV)  
VRRM  
2 x 40 A  
100 V  
Tj (max)  
VF (max)  
175 °C  
0.70 V  
FEATURES AND BENEFITS  
HIGH REVERSE VOLTAGE  
A2  
NEGLIGIBLE SWITCHING LOSSES  
LOW FORWARD VOLTAGE DROP  
LOW LEAKAGE CURRENT  
HIGH TEMPERATURE  
LOW THERMAL RESISTANCE  
AVALANCHE CAPABILITY SPECIFIED  
K
A1  
Max247  
DESCRIPTION  
Dual center tap Schottky rectifier suited for  
Switched Mode Power Supplies and high  
frequency DC to DC converters.  
Packaged in Max247, this device is intended for  
use in high frequency computer and telecom  
converters.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
100  
50  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
IF(AV) Average forward current  
A
Tc = 155°C  
δ = 0.5  
Per diode  
Per device  
40  
80  
A
IFSM  
Surge non repetitive forward cur-  
rent  
tp = 10 ms sinusoidal  
400  
A
IRRM  
PARM  
Tstg  
Repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 2 µs square F = 1kHz  
tp = 1µs Tj = 25°C  
2
A
W
39200  
- 65 to + 175  
175  
°C  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
°C  
dV/dt  
10000  
V/µs  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 2B  
1/4  

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