Datasheet > STPS80H100

STPS80H100

更新时间： 2023-12-20 18:44:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
4页	117K
描述
100 V、80 A功率肖特基整流器

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中文翻译

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数据手册

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STPS80H100 数据手册

STPS80H100TV

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 40 A

100 V

Tj (max)

V_F(max)

150 °C

0.65 V

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY

LOW LEAKAGE CURRENT

GOOD TRADE OFF BETWEEN LEAKAGE CUR-

RENT AND FORWARD VOLTAGE DROP

AVALANCHE RATED

LOW INDUCTANCE PACKAGE

ISOTOP^TM

INSULATED PACKAGE :

Insulated voltage = 2500 V_(RMS)

Capacitance = 45 pF

DESCRIPTION

High voltage dual Schottky barrier rectifier

designed for high frequency telecom and

computer Switched Mode Power Supplies

and other power converters.

Packaged in ISOTOP, this device is intended for

use in medium voltage operation, and particu-

larly, in high frequency circuitries where low

switching losses and low noise are required.

ABSOLUTE RATINGS

Symbol

(limiting values, per diode)

Parameter

Value

100

Unit

V_RRM

Repetitive peak reverse voltage

I_F(RMS)RMS forward current

125

I_F(AV)

Average forward current

Tc = 120°C

Per diode

Per device

= 0.5

I_FSM

I_RRM

I_RSM

T_stg

Surge non repetitive forward current tp = 10 ms sinusoidal

700

Repetitive peak reverse current

tp = 2 s square F = 1kHz

Non repetitive peak reverse current tp = 100 s square

Storage temperature range

- 55 to +150

150

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

V/ s

dV/dt

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j−a)

July 1999 - Ed: 3A

1/4

12 3 4

中文翻译

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