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STPS80150CW PDF预览

STPS80150CW

更新时间: 2024-01-09 16:38:41
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压PC局域网高电压电源
页数 文件大小 规格书
4页 56K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS80150CW 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-247AD包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.7
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180464Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-247Samacsys Released Date:2020-06-03 09:53:10
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:HIGH VOLTAGE POWER配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.74 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:500 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:40 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:150 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS80150CW 数据手册

 浏览型号STPS80150CW的Datasheet PDF文件第2页浏览型号STPS80150CW的Datasheet PDF文件第3页浏览型号STPS80150CW的Datasheet PDF文件第4页 
®
STPS80150CW  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAJOR PRODUCTS CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 40 A  
150 V  
K
Tj (max)  
VF (max)  
175°C  
0.74 V  
FEATURES AND BENEFITS  
A2  
HIGH JUNCTION TEMPERATURE CAPABILITY  
LOW LEAKAGE CURRENT  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
K
A1  
TO-247  
LOW THERMAL RESISTANCE  
HIGH FREQUENCY OPERATION  
DESCRIPTION  
Dual center tap Schottky rectifiers suited for high  
frequency switch mode power supply.  
Packaged in TO-247, this devices is intended for  
use to enhance the reliability of the application.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
150  
80  
Unit  
V
IF(RMS)  
IF(AV)  
A
RMS forward current  
40  
80  
A
Average forward current  
Tc = 150°C Per diode  
δ = 0.5 Per device  
IFSM  
PARM  
Tstg  
500  
38200  
A
W
Surge non repetitive forward current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp = 1µs Tj = 25°C  
- 65 to + 175  
175  
°C  
Tj  
°C  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
V/µs  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
October 2003 - Ed: 1A  
1/4  

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