STPS80170C

更新时间： 2024-11-12 08:58:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压高电压电源
页数	文件大小	规格书
6页	92K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS80170C 数据手册

STPS80170C

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

I_F(AV)

V_RRM

T_j

2 x 40 A

170 V

175 °C

0.74 V

V_F(max)

FEATURES AND BENEFITS

■

High junction temperature capability

Low leakage current

Good trade off between leakage current and

forward voltage drop

Low thermal resistance

High frequency operation

Avalanche specification

TO-247

STPS80170CW

■

Table 2: Order Code

Part Number

Marking

DESCRIPTION

STPS80170CW

Dual center tab Schottky rectifier suited for High

Frequency Switched Mode Power Supplies.

Packaged in TO-247, this device is intended for

use to enhance the reliability of the application.

Table 3: Absolute Ratings (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

170

Unit

V_RRM

I_F(RMS)

RMS forward current

Per diode

Per device

t_p= 10 ms sinusoidal

I_F(AV)

T_c= 150 °C δ = 0.5

Average forward current

I_FSM

P_ARM

T_stg

T_j

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range

500

38200

t_p= 1 µs T_j= 25 °C

-65 to + 175

175

°C

Maximum operating junction temperature *

°C

dV/dt Critical rate of rise of reverse voltage

10000

V/µs

dPtot

dTj

---------------

-------------------------

* :

thermal runaway condition for a diode on its own heatsink

Rth(j – a)

September 2005

REV. 1

1/6

12 3 4 5 6

中文翻译

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