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STP80N03L-06 PDF预览

STP80N03L-06

更新时间: 2024-02-04 02:08:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 80K
描述
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

STP80N03L-06 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.63
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):600 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP80N03L-06 数据手册

 浏览型号STP80N03L-06的Datasheet PDF文件第2页浏览型号STP80N03L-06的Datasheet PDF文件第3页浏览型号STP80N03L-06的Datasheet PDF文件第4页浏览型号STP80N03L-06的Datasheet PDF文件第5页 
STP80N03L-06  
N - CHANNEL ENHANCEMENT MODE  
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR  
TENTATIVE DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP80N03L-06  
30 V  
< 0.006 80 A (*)  
TYPICAL RDS(on) = 0.005 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
HIGH CURRENT CAPABILITY  
175oC OPERATING TEMPERATURE  
HIGH dV/dt RUGGEDNESS  
3
2
1
APPLICATION ORIENTED  
CHARACTERIZATION  
TO-220  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
POWER MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCRONOUS RECTIFICATION  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
30  
V
V
VDGR  
VGS  
30  
± 15  
V
o
ID  
Drain Current (continuous) at Tc = 25 C  
80  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
60  
A
IDM()  
Ptot  
Drain Current (pulsed)  
320  
A
o
Total Dissipation at Tc = 25 C  
150  
W
Derating Factor  
1
5
W/oC  
V/ns  
oC  
oC  
dV/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 175  
175  
Tj  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/5  
March 1996  

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