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STP80NE06-10 PDF预览

STP80NE06-10

更新时间: 2024-01-20 22:11:54
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 94K
描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STP80NE06-10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.68
雪崩能效等级(Eas):250 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.01 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP80NE06-10 数据手册

 浏览型号STP80NE06-10的Datasheet PDF文件第2页浏览型号STP80NE06-10的Datasheet PDF文件第3页浏览型号STP80NE06-10的Datasheet PDF文件第4页浏览型号STP80NE06-10的Datasheet PDF文件第5页浏览型号STP80NE06-10的Datasheet PDF文件第6页浏览型号STP80NE06-10的Datasheet PDF文件第7页 
STP80NE06-10  
N - CHANNEL ENHANCEMENT MODE  
” SINGLE FEATURE SIZE ” POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP80NE06-10  
60 V  
<0.01 Ω  
80 A  
TYPICAL RDS(on) = 0.0085 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
DESCRIPTION  
This Power MOSFET is the latest development of  
SGS-THOMSON unique ”Single Feature Size  
2
1
strip-based process. The resulting transistor  
shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a  
remarkable manufacturing reproducibility.  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
60  
V
V
VDGR  
VGS  
ID  
60  
± 20  
V
80  
A
ID  
57  
A
I
DM()  
320  
A
Ptot  
Total Dissipation at Tc = 25 oC  
150  
W
Derating Factor  
1
7
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
(1) ISD 80 A,di/dt 300 A/µs, VDD V(BR)DSS, T TJMAX  
j
1/8  
February 1998  

STP80NE06-10 替代型号

型号 品牌 替代类型 描述 数据表
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