Datasheet > STP80N240K6

STP80N240K6

更新时间： 2023-12-20 18:45:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	250K
描述
N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

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STP80N240K6 数据手册

STP80N240K6

Datasheet

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET

in a TO-220 package

Features

DS(on)

max.

Order code

TAB

STP80N240K6

800 V

220 mΩ

16 A

•

Worldwide best R_DS(on)x area

Worldwide best FOM (figure of merit)

Ultra low gate charge

TO-220

100% avalanche tested

Zener-protected

D(2, TAB)

Applications

•

Flyback converter

G(1)

Adapters for tablets, notebook and AIO

LED lighting

Description

S(3)

AM01476v1_tab

This very high voltage N-channel Power MOSFET is designed using the ultimate

MDmesh K6 technology based on 20 years STMicroelectronics experience on super

junction technology. The result is the best-in-class on-resistance per area and gate

charge for applications requiring superior power density and high efficiency.

Product status link

STP80N240K6

Product summary

Order code

STP80N240K6

Marking

Package

Packing

80N240K6

TO-220

Tube

DS13772 - Rev 3 - September 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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