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STP80NF03 PDF预览

STP80NF03

更新时间: 2024-01-21 15:47:44
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 52K
描述
N-CHANNEL 30V - 0.0034 ohm - 80A TO-220 STripFET POWER MOSFET

STP80NF03 数据手册

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STP80NF03L-04  
N-CHANNEL 30V - 0.0034  
- 80A TO-220  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP80NF03L-04  
30 V  
< 0.004 Ω  
80 A  
TYPICAL RDS(on) = 0.0034 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE 100 oC  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
2
1
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalance  
characteristics and less critical alignment steps  
TO-220  
therefore  
reproducibility.  
a
remarkable  
manufacturing  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc. )  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
30  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
VDGR  
VGS  
30  
V
± 20  
80  
V
o
ID(• • )  
ID  
Drain Current (continuous) at Tc = 25 C  
A
o
Drain Current (continuous) at Tc = 100 C  
56  
A
IDM  
(
Drain Current (pulsed)  
320  
A
)  
o
Ptot  
Total Dissipation at Tc = 25 C  
210  
W
Derating Factor  
1.43  
2
W/oC  
EAS(1) Single Pulse Avalanche Energy  
J
Tstg  
Tj  
Storage Temperature  
-65 to 175  
175  
oC  
oC  
Max. Operating Junction Temperature  
() Pulse width limitedby safe operating area  
(••) Current limited by package  
(1) starting Tj = 25 oC, ID =40A , VDD =15V  
1/6  
November 1999  

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