品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | ![]() |
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页数 | 文件大小 | 规格书 |
10页 | 380K | ![]() |
描述 | ||
N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 190 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (Abs) (ID): | 4.3 A | 最大漏极电流 (ID): | 4.3 A |
最大漏源导通电阻: | 2.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 最大脉冲漏极电流 (IDM): | 17.2 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP5NK80Z | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220F |
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STP5NK80ZFP | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220F |
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STP5NK80ZFP-H | STMICROELECTRONICS |
获取价格 |
4.3A, 800V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIAN |
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STP5NK90Z | STMICROELECTRONICS |
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N-CHANNEL 900V - 2ohm - 4.5A TO-220/TO-220FP |
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STP5NK90Z_06 | STMICROELECTRONICS |
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N-channel 900V - 2Ω - 4.5A - TO-220/TO-220FP |
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STP607D | STANSON |
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TO-251/TO-252 |
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STP60N043DM9 | STMICROELECTRONICS |
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N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package |
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STP60N05 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 60A I(D) | TO-220 |
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STP60N05-14 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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STP60N05-16 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 60A I(D) | TO-220 |
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