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STP60N043DM9 PDF预览

STP60N043DM9

更新时间: 2023-12-20 18:46:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 408K
描述
N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

STP60N043DM9 数据手册

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STP60N043DM9  
Datasheet  
N-channel 600 V, 38 mΩ typ., 55 A MDmesh DM9 Power MOSFET  
in a TO-220 package  
Features  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
TAB  
STP60N043DM9  
600 V  
43 mΩ  
55 A  
Fast-recovery body diode  
3
2
Worldwide best RDS(on) per area among silicon-based fast recovery devices  
Low gate charge, input capacitance and resistance  
100% avalanche tested  
1
TO-220  
Extremely high dv/dt ruggedness  
D(2, TAB)  
Applications  
Power supplies and converters  
LLC resonant converter  
G(1)  
Description  
This N-channel Power MOSFET is based on the most innovative super-junction  
MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very  
low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9  
technology benefits from a multi-drain manufacturing process which allows an  
enhanced device structure. The fast-recovery diode featuring very low recovery  
charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power  
MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS  
phase-shift converters.  
S(3)  
AM01475v1_noZen  
Product status link  
STP60N043DM9  
Product summary  
Order code  
STP60N043DM9  
Marking  
Package  
Packing  
60N043DM9  
TO-220  
Tube  
DS13931 - Rev 4 - August 2023  
For further information contact your local STMicroelectronics sales office.  
www.st.com  
 

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