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STP60NE03L-12 PDF预览

STP60NE03L-12

更新时间: 2024-11-25 22:06:23
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 87K
描述
N - CHANNEL 30V - 0.009 ohm - 60A - T0-220 STripFET POWER MOSFET

STP60NE03L-12 数据手册

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STP60NE03L-12  
N - CHANNEL 30V - 0.009 - 60A - T0-220  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP60NE03L-12  
30 V  
< 0.012 Ω  
60 A  
TYPICAL RDS(on) = 0.009 Ω  
AVALANCE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100 oC  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
175 oC OPERATING TEMPERATURE  
APPLICATIONORIENTED  
3
2
1
CHARACTERIZATION  
TO-220  
DESCRIPTION  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
30  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
30  
± 20  
60  
V
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
A
ID  
42  
A
I
DM()  
240  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
100  
W
Derating Factor  
0.67  
5.5  
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
( ) ISD 60 A, di/dt 450 A/µs, VDD V(BR)DSS, Tj TJMAX  
1
1/8  
February 1999  

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