Datasheet > STP14NF12_06

STP14NF12_06

更新时间： 2024-02-26 05:04:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
14页	311K
描述
N-channel 120V - 0.16OHM - 14A - TO-220/TO-220FP Low gate charge STripFET TM II Power MOSFET

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中文翻译

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STP14NF12_06 数据手册

Electrical characteristics

STP14NF12 - STP14NF12FP

Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 3.

Symbol

On/off states

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

V_(BR)DSS

I_D= 250µA, V_GS=0

120

breakdown voltage

_DS= max ratings

Zero gate voltage

µA

I_DSS

V_DS= max ratings,

T_C= 125°C

drain current (V_GS= 0)

Gate-body leakage

current (V_DS= 0)

I_GSS

V_GS

V_DS= V_GS, I_D= 250µA

_GS= 10V, I_D= 7A

20V

100

V_GS(th)

R_DS(on)

Gate threshold voltage

Static drain-source on

resistance

0.16

0.18

Ω

Table 4.

Symbol

Dynamic

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Forward

transconductance

(1)

g_fs

V_DS= 15V, I_D= 7A

Input capacitance

Output capacitance

C_iss

C_oss

C_rss

460

V_DS= 25V, f = 1MHz,

V_GS= 0

Reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Rise time

V_DD= 50V, I_D= 7A

R_G= 4.7Ω V_GS= 10V

(see Figure 15)

Turn-off delay time

Fall time

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 80V, I_D= 14A,

V_GS= 10V

15.5

3.7

(see Figure 16)

4.7

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

4/14

1 2 345 6 7...14

中文翻译

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