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STP11N52K3 PDF预览

STP11N52K3

更新时间: 2024-01-10 16:22:02
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
20页 1160K
描述
N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

STP11N52K3 数据手册

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STB11N52K3, STF11N52K3  
STP11N52K3  
N-channel 525 V, 0.41 Ω, 10 A SuperMESH3™ Power MOSFET  
in D²PAK,TO-220FP and TO-220 packages  
Datasheet — production data  
Features  
TAB  
RDS(on)  
max.  
Order codes  
VDSS  
ID  
Pw  
3
3
STB11N52K3  
125 W  
2
2
1
1
STF11N52K3 525 V  
STP11N52K3  
< 0.51 Ω  
10 A 30 W  
125 W  
TO-220  
TO-220FP  
TAB  
100% avalanche tested  
Extremely high dv/dt capability  
Gate charge minimized  
3
1
PAK  
Very low intrinsic capacitance  
Improved diode reverse recovery  
characteristics  
Zener-protected  
Figure 1.  
Internal schematic diagram  
D(2,TAB)  
Applications  
Switching applications  
Description  
G(1)  
These devices are N-channel Power MOSFETs  
made using the SuperMESH3™ technology that  
is obtained via improvements applied to  
STMicroelectronics’ SuperMESH™ technology  
combined with a new optimized vertical structure.  
The resulting transistor has an extremely low on  
resistance, superior dynamic performance and  
high avalanche capability, making it especially  
suitable for the most demanding applications.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Packages  
Packaging  
STB11N52K3  
STF11N52K3  
STP11N52K3  
PAK  
TO-220FP  
TO-220  
Tape and reel  
Tube  
11N52K3  
Tube  
March 2012  
Doc ID 018868 Rev 2  
1/20  
This is information on a product in full production.  
www.st.com  
20  

STP11N52K3 替代型号

型号 品牌 替代类型 描述 数据表
STB11N52K3 STMICROELECTRONICS

完全替代

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET
R5011FNX ROHM

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