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STM4410A PDF预览

STM4410A

更新时间: 2024-09-17 04:01:47
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 695K
描述
N-Channel E nhancement Mode Field Effect Transistor

STM4410A 数据手册

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S TM4410A  
S amHop Microelectronics C orp.  
J an 04 2005 ver1.1  
N-C hannel E nhancement Mode Field E ffect Transistor  
PR ODUCT S UMMAR Y  
FE ATUR E S  
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
VDS S  
ID  
R DS (ON) ( m  
) Max  
9.5 @ VG S = 10V  
21 @ VG S = 4.5V  
30V  
10A  
S urface Mount P ackage.  
S O-8  
1
ABS OLUTE MAXIMUM R ATING S (T  
A
=25 C unless otherwise noted)  
Limit  
30  
Unit  
V
P arameter  
S ymbol  
Drain-S ource Voltage  
V
V
DS  
G S  
V
G ate-S ource Voltage  
20  
I
D
10  
Drain C urrent-C ontinuous a @ T  
-P ulsed b  
J
=25 C  
A
A
I
DM  
39  
Drain-S ource Diode Forward C urrent a  
Maximum P ower Dissipation a  
A
I
S
1.7  
2.5  
P
D
W
C
Operating J unction and S torage  
Temperature R ange  
T
J
, TS TG  
-55 to 150  
THE R MAL C HAR AC TE R IS TIC S  
Thermal R esistance, J unction-to-Ambient a  
C
/W  
R
J A  
50  
1

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