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STM4639 PDF预览

STM4639

更新时间: 2024-11-23 04:01:47
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 546K
描述
P-Channel E nhancement Mode Field Effect Transistor

STM4639 数据手册

 浏览型号STM4639的Datasheet PDF文件第2页浏览型号STM4639的Datasheet PDF文件第3页浏览型号STM4639的Datasheet PDF文件第4页浏览型号STM4639的Datasheet PDF文件第5页浏览型号STM4639的Datasheet PDF文件第6页浏览型号STM4639的Datasheet PDF文件第7页 
S TM4639  
S amHop Microelectronics C orp.  
Nov,10 2005  
P -C hannel E nhancement Mode Field E ffect Transistor  
PR ODUCT S UMMAR Y  
FE ATUR E S  
5
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
VDS S  
ID  
R DS (ON) ( m  
) Max  
8.5 @ VG S = -10V  
13 @ VG S = -4.0V  
-35  
-14A  
S urface Mount P ackage.  
E S D P rocteced  
S O-8  
1
ABS OLUTE MAXIMUM R ATING S (T  
A
=25 C unless otherwise noted)  
Limit  
35  
Unit  
V
P arameter  
S ymbol  
Drain-S ource Voltage  
V
V
DS  
G S  
V
G ate-S ource Voltage  
20  
-14  
I
D
A
Drain C urrent-C ontinuous  
-P ulsed b  
-56  
-1.7  
2.5  
A
I
DM  
A
Drain-S ource Diode Forward C urrent  
Maximum P ower Dissipation  
I
S
P
D
W
C
Operating J unction and S torage  
Temperature R ange  
T
J
, TS TG  
-55 to 150  
THE R MAL C HAR AC TE R IS TIC S  
Thermal R esistance, J unction-to-Ambient  
C
/W  
R
J A  
50  
1

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