Datasheet > STM4635

STM4635

更新时间： 2024-11-19 06:14:47

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	160K
描述
P-Channel Enhancement Mode Field Effect Transistor

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STM4635 数据手册

STM4635

Ver 1.0

S mHop Microelectronics Corp.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON).

RDS(ON) (mΩ) Max

VDSS

Rugged and reliable.

33 @ VGS=-10V

50 @ VGS=-4.5V

Suface Mount Package.

ESD Procteced

-7A

-40V

S O-8

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

(

)

Symbol

V_DS

Limit

-40

Parameter

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A=25 C

-7

-5.6

-39

I_D

Drain Current-Continuous

T_A=70 C

I_DM

-Pulsed

Single Pulse Avalanche Energy ^d

E_AS

T_A=25 C

2.5

1.6

Maximum Power Dissipation

P_D

T_A=70 C

Operating Junction and Storage

Temperature Range

T_J, T_STG

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

°C/W

Details are subject to change without notice.

Aug,15,2008

www.samhop.com.tw

12 3 4 5 6 7

中文翻译

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