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STM4433 PDF预览

STM4433

更新时间: 2024-11-09 04:01:47
品牌 Logo 应用领域
三合微科 - SAMHOP /
页数 文件大小 规格书
7页 657K
描述
P-Channel E nhancement Mode MOSFET

STM4433 数据手册

 浏览型号STM4433的Datasheet PDF文件第2页浏览型号STM4433的Datasheet PDF文件第3页浏览型号STM4433的Datasheet PDF文件第4页浏览型号STM4433的Datasheet PDF文件第5页浏览型号STM4433的Datasheet PDF文件第6页浏览型号STM4433的Datasheet PDF文件第7页 
S TM4433  
S amHop Microelectronics C orp.  
MAY. 12 2004  
P -C hannel E nhancement Mode MOS FE T  
PR ODUCT S UMMAR Y  
FE ATUR E S  
5
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
VDS S  
ID  
R DS (ON) ( m  
) Max  
35 @ VG S = -10V  
50 @ VG S = -4.5V  
-6A  
-30V  
S urface Mount P ackage.  
D
8
D
7
D
6
D
5
S O-8  
1
1
2
3
4
S
S
S
G
ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)  
A
Limit  
30  
Unit  
V
P arameter  
S ymbol  
Drain-S ource Voltage  
V
V
DS  
G S  
V
G ate-S ource Voltage  
20  
-6  
I
D
Drain C urrent-C ontinuous a @ T  
-P ulsed b  
J
=125 C  
A
-30  
-1.7  
2.5  
A
I
DM  
Drain-S ource Diode Forward C urrent a  
Maximum P ower Dissipation a  
A
I
S
P
D
W
C
Operating J unction and S torage  
Temperature R ange  
T
J
, TS TG  
-55 to 150  
THE R MAL C HAR AC TE R IS TIC S  
Thermal R esistance, J unction-to-Ambient a  
C
/W  
R
J A  
50  
1

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