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STM4637 PDF预览

STM4637

更新时间: 2024-11-19 06:14:47
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 161K
描述
P-Channel Enhancement Mode Field Effect Transistor

STM4637 数据手册

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STM4637  
Ver 1.1  
a
S mHop Microelectronics Corp.  
P-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
PRODUCT SUMMARY  
Super high dense cell design for low RDS(ON).  
RDS(ON) (m) Max  
VDSS  
ID  
Rugged and reliable.  
30 @ VGS=-10V  
48 @ VGS=-4.5V  
Suface Mount Package.  
ESD Protected.  
-7.7A  
-30V  
5
6
7
8
4
3
2
1
D
D
G
S
S
S
D
D
S O-8  
1
°
ABSOLUTE MAXIMUM RATINGS TA=25 C unless otherwise noted  
)
(
Symbol  
VDS  
Parameter  
Units  
Limit  
-30  
Drain-Source Voltage  
V
V
VGS  
ID  
Gate-Source Voltage  
Drain Current-Continuousa  
20  
°
TA=25 C  
A
A
-7.7  
-35  
b
IDM  
-Pulsed  
Single Pulse Avalanche Energy d  
Maximum Power Dissipation a  
37  
EAS  
PD  
mJ  
°
TA=25 C  
2.5  
W
Operating Junction and Storage  
Temperature Range  
-55 to 150  
TJ, TSTG  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient a  
°C/W  
R
50  
JA  
Details are subject to change without notice.  
May,13,2008  
www.samhop.com.tw  
1

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