STM4550

更新时间： 2024-11-19 04:01:47

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	122K
描述
N-Channel E nhancement Mode Field Effect Transistor

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数据手册

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STM4550 数据手册

S TM4550

S amHop Microelectronics Corp.

Apr. 19. 2006

N-Channel E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

50 @ VGS = 10V

70 @ VGS = 4.5V

55V

5 A

S urface Mount Package.

S O-8

ABS OLUTE MAXIMUM R ATINGS (T

=25 C unless otherwise noted)

Limit

Unit

Parameter

S ymbol

Vspike

Drain-S ource Voltage R ating

Drain-S ource Voltage

G ate-S ource Voltage

Drain Current-Continuous @ T

-Pulsed^a

=25 C

1.7

2.5

Drain-S ource Diode Forward Current ^b

Maximum Power Dissipation ^b

Operating Junction and S torage

Temperature R ange

, TS TG

-55 to 150

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Ambient ^a

12 3 4 5 6 7 8

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