Datasheet > STM4633

STM4633

更新时间： 2024-09-18 06:14:47

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	160K
描述
P-Channel Enhancement Mode Field Effect Transistor

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STM4633 数据手册

STM4633

Ver 1.0

S mHop Microelectronics Corp.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON).

VDSS

RDS(ON) (mΩ) Max

Rugged and reliable.

Suface Mount Package.

ESD Protected.

33 @ VGS=-10V

52 @ VGS=-4.5V

-7.0A

-30V

S O-8

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Limit

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A=25 C

-7

I_D

Drain Current-Continuous

T_A=70 C

-5.6

-40

I_DM

-Pulsed

E_AS

Single Pulse Avalanche Energy

T_A=25 C

2.5

1.6

P_D

Maximum Power Dissipation

T_A=70 C

Operating Junction and Storage

Temperature Range

-55 to 150

T_J^,T_STG

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

°C/W

Details are subject to change without notice.

Aug,13,2008

www.samhop.com.tw

12 3 4 5 6 7

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