STM4435

更新时间： 2024-09-17 04:01:47

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	744K
描述
P-Channel E nhancement Mode Field Effect Transistor

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数据手册

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STM4435 数据手册

S TM4435

S amHop Microelectronics C orp.

J AN.20 2006

P -C hannel E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

20 @ VG S = -10V

33 @ VG S = -4.5V

-30V

-8A

S urface Mount P ackage.

S O-8

ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous ^a@ Tj=25 C

-P ulsed ^b

1.7

Drain-S ource Diode Forward C urrent ^a

Maximum P ower Dissipation ^a

2.5

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 150

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-Ambient ^a

J A

12 3 4 5 6 7 8

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与STM4435相关器件

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