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STM4470E PDF预览

STM4470E

更新时间: 2024-11-23 08:59:43
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管
页数 文件大小 规格书
7页 120K
描述
N-Channel Enhancement Mode Field Effect Transistor

STM4470E 数据手册

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STM4470E  
May. 15 2007 ver1.0  
SamHop Microelectronics Corp.  
N-Channel Enhancement Mode Field Effect Transistor  
FE ATUR E S  
PRODUCT SUMMARY  
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
VDSS  
ID  
RDS(ON) ( m ı ) Max  
12 @ VGS = 10V  
15 @ VGS = 4.5V  
40V  
9.5A  
S urface Mount Package.  
E S D Protected.  
SO-8  
1
ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
VGS  
ID  
Limit  
Unit  
40  
20  
V
V
A
A
A
Drain Current-Continuous a @TJ=25 C  
-Pulsed b  
9.5  
39  
IDM  
IS  
Drain-Source Diode Forward Current a  
1.7  
2.5  
a
Maximum Power Dissipation  
PD  
W
C
Operating Junction and Storage  
Temperature Range  
TJ, TSTG  
-55 to 150  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient a  
C
/W  
R
JA  
50  
1

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