Datasheet > STFV4N150_07

STFV4N150_07

更新时间： 2024-10-01 03:21:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	249K
描述
N-channel 1500V - 5ヘ - 4A - TO-220FH Very high voltage PowerMESH⑩ Power MOSFET

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STFV4N150_07 数据手册

STFV4N150

N-channel 1500V - 5Ω - 4A - TO-220FH

Very high voltage PowerMESH™ Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

STFV4N150

1500V

<7Ω

40W

■ Avalanche ruggedness

■ Gate charge minimized

■ Very low intrinsic capacitances

■ High speed switching

TO-220FH

■ Fully plastic TO-220 package

■ Creepage distance path is > 4mm

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, unrivalled gate charge and

switching characteristics. The creepage path is

what makes this package unique from TO-220FP.

The creepage distance path between each lead

and between the leads and the heatsink has been

increased to >4.0mm, making this package met

all stringent safety norms in high voltage

applications.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STFV4N150

FV4N150

TO-220FH

Tube

March 2007

Rev 4

1/13

www.st.com

12 3 4 5 6 7...13

中文翻译

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