Datasheet > STFW3N150_10

STFW3N150_10

更新时间： 2024-10-01 06:14:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	762K
描述
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF

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STFW3N150_10 数据手册

STFW3N150

STP3N150, STW3N150

N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET

in TO-220, TO-247, TO-3PF

Features

R_DS(on)

max.

Type

V_DSS

I_D

P_TOT

STFW3N150 1500 V

STP3N150 1500 V

STW3N150 1500 V

< 9 Ω

2.5 A 63 W

2.5 A 140 W

TO-220

■ 100% avalanche tested

■ Intrinsic capacitances and Q minimized

■ High speed switching

TO-247

■ Fully isolated TO-3PF plastic package

TO-3PF

■ Creepage distance path is 5.4 mm (typ.) for

TO-3PF

Figure 1.

Internal schematic diagram

Application

$ꢅꢆꢇ

Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAY process, STMicroelectronics has

'ꢅꢁꢇ

designed an advanced family of very high voltage

Power MOSFETs with outstanding performances.

The strengthened layout coupled with the

3ꢅꢈꢇ

company’s proprietary edge termination structure,

gives the lowest R

per area, unrivalled gate

DS(on)

charge and switching characteristics.

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STFW3N150

STP3N150

STW3N150

3N150

TO-3PF

TO-220

TO-247

Tube

June 2010

Doc ID 13102 Rev 9

1/15

www.st.com

12 3 4 5 6 7...15

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