Datasheet > STG15M65F2D7

STG15M65F2D7

更新时间： 2024-10-02 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
10页	183K
描述
650 V、15 A沟槽栅场截止低损耗M系列IGBT晶片，D7封装

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STG15M65F2D7 数据手册

STG15M65F2D7

Datasheet

Trench gate field-stop, 650 V, 15 A, low-loss M series IGBT die in D7 packing

Features

•

6 µs of minimum short-circuit withstand time

Low V_CE(sat)= 1.55 V (typ.) @ I_C= 15 A

Positive V_CE(sat)temperature coefficient

Tight parameter distribution

Maximum junction temperature: T_J= 175 °C

Applications

•

Motor control

UPS

EGCD

Solar

General-purpose inverter

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where low-loss and

short-circuit functionality are essential. Furthermore, the positive V_CE(sat)temperature

coefficient and tight parameter distribution result in safer paralleling operation.

Product status link

STG15M65F2D7

Product summary

Order code

STG15M65F2D7

650 V

15 A

Die size

Packing

3.04 x 3.04 mm

DS12526 - Rev 1 - April 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...10

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