Datasheet > STG25H120F2D7

STG25H120F2D7

更新时间： 2024-11-30 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
10页	246K
描述
1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing

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STG25H120F2D7 数据手册

STG25H120F2D7

1200 V, 25 A trench gate field-stop H series

IGBT die in D7 packing

Datasheet

target specification

Description

This die is an IGBT developed using an advanced

proprietary trench gate and field-stop structure.

This device is a part of the H2 series IGBTs.

*ꢀ

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6&ꢁꢂꢃꢄꢅ

Features

•

5 µs of short-circuit withstand time

Low V_CE(sat)= 2.1 V (typ.) at I_C= 25 A

Tight parameter distribution

Low switching-off losses

Safer paralleling

Applications

•

Welding

UPS

Industrial drives

Photovoltaic inverter

Table 1. Device summary

Order code

V_CE

I_CN

Die size

Packing

STG25H120F2D7

1200 V

25 A

6.00 x 4.59 mm²

May 2015

DocID027364 Rev 1

1/10

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

www.st.com

12 3 4 5 6 7...10

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