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STG30M65F2D7 PDF预览

STG30M65F2D7

更新时间: 2024-11-29 14:58:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
10页 188K
描述
650 V、30 A沟槽栅场截止低损耗M系列IGBT晶片,D7封装

STG30M65F2D7 数据手册

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STG30M65F2D7  
Datasheet  
Trench gate field-stop 650 V, 30 A low-loss M series IGBT die in D7 packing  
C
Features  
6 µs of minimum short-circuit withstand time  
VCE(sat) = 1.55 V (typ.) @ IC = 30 A  
Positive VCE(sat) temperature coefficient  
Tight parameter distribution  
G
Maximum junction temperature: TJ = 175 °C  
Applications  
Motor control  
PFC  
E
EGCD  
UPS  
General purpose inverter  
Description  
This device is an IGBT developed using an advanced proprietary trench gate field-  
stop structure. The device is part of the M series IGBTs, which represent an optimal  
balance between inverter system performance and efficiency where low-loss and  
short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature  
coefficient and tight parameter distribution result in safer paralleling operation.  
Product status  
STG30M65F2D7  
Device summary  
Order code  
STG30M65F2D7  
V
650 V  
30 A  
CE  
I
CN  
Die size  
Packing  
3.6 x 4.6 mm²  
D7  
DS12363 - Rev 2 - April 2018  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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