Datasheet > STG15M120F3D7

STG15M120F3D7

更新时间： 2024-11-29 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
10页	258K
描述
1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D7 packing

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STG15M120F3D7 数据手册

STG15M120F3D7

Datasheet

Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing

Features

•

10 µs of short-circuit withstanding time

Low V_CE(sat)= 1.85 V (typ.) @ I_C= 15 A

Positive V_CE(sat)temperature coefficient

Tight parameter distribution

Maximum junction temperature: T_J= 175 °C

Applications

•

Industrial motor control

EGCD

Industrial drives

Solar inverters

Uninterruptable power supplies (UPS)

PFC converters

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive V_CE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

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STG15M120F3D7

Product summary

Order code

STG15M120F3D7

1200 V

15 A

4.4 x 4.4 mm

Die size

Packing

DS10801 - Rev 3 - August 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...10

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