生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.38 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 7.4 A |
最大漏源导通电阻: | 0.31 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257 | JESD-30 代码: | R-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STFY140 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 100V, 0.095ohm, 1-Element, N-Channel, Silicon, Me | |
STFY200 | MICROSEMI |
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Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met | |
STFY240 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met | |
STFY300 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Me | |
STFY340 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 400V, 0.56ohm, 1-Element, N-Channel, Silicon, Met | |
STFY400 | MICROSEMI |
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Power Field-Effect Transistor, 5.5A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Met | |
STFY440 | MICROSEMI |
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Power Field-Effect Transistor, 8A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Meta | |
STFY9130 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 5.3A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
STFY9140 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Me | |
STG1218IQT | STMICROELECTRONICS |
获取价格 |
Dual supply, quad SPDT switch, 1.8V and 3.3V logic input compatible |