Datasheet > STFW4N150_09

STFW4N150_09

更新时间： 2024-10-01 06:14:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	759K
描述
N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF

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STFW4N150_09 数据手册

STFW4N150

STP4N150, STW4N150

N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET

in TO-220, TO-247, TO-3PF

Features

Type

STFW4N150 1500 V

STP4N150 1500 V

STW4N150 1500 V

V_DSS

R_DS(on)max

I_D

< 7 Ω

4 A 63 W

4 A 160 W

TO-220

TO-247

■ 100% avalanche tested

■ Intrinsic capacitances and Qg minimized

■ High speed switching

■ Fully isolated TO-3PF plastic packages

TO-3PF

■ Creepage distance path is 5.4 mm (typ.) for

TO-3PF

Figure 1.

Internal schematic diagram.

Application

■ Switching applications

$ꢅꢆꢇ

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of very high voltage

Power MOSFETs with outstanding performances.

The strengthened layout coupled with the

'ꢅꢁꢇ

company’s proprietary edge termination structure,

3ꢅꢈꢇ

gives the lowest R

per area, unrivalled gate

DS(on)

charge and switching characteristics.

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STFW4N150

STP4N150

STW4N150

4N150

P4N150

W4N150

TO-3PF

TO-220

TO-247

Tube

July 2009

Doc ID 11262 Rev 9

1/15

www.st.com

12 3 4 5 6 7...15

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