Datasheet > STFV4N150_08

STFV4N150_08

更新时间： 2024-10-01 03:21:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	460K
描述
N-channel 1500 V - 5 ヘ - 4 A - PowerMESH⑩ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

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中文翻译

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数据手册

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STFV4N150_08 数据手册

STFV4N150 - STFW4N150

STP4N150 - STW4N150

N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET

TO-220 - TO-220FH - TO-247 - TO-3PF

Features

Type

V_DSS

R_DS(on)max

I_D

STFV4N150

STFW4N150 ⁽¹⁾

STP4N150

1500 V

< 7 Ω

4 A

TO-220

TO-247

STW4N150

1. All data which refers solely to the TO-3PF package is

preliminary

■ 100% avalanche tested

TO-3PF

■ Intrinsic capacitances and Qg minimized

■ High speed switching

TO-220FH

■ Fully isolated TO-3PF and TO-220FH plastic

packages

Figure 1.

Internal schematic diagram.

■ Creepage distance path is 5.4 mm (typ.) for

TO-3PF

■ Creepage distance path is > 4 mm for

TO-220FH

Application

■ Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of very high voltage

Power MOSFETs with outstanding performances.

The strengthened layout coupled with the

company’s proprietary edge termination structure,

gives the lowest R

per area, unrivalled gate

DS(on)

charge and switching characteristics.

Table 1. Device summary

Order codes

Marking

Package

TO-220FH

Packaging

STFV4N150

STFW4N150

STP4N150

STW4N150

4N150

Tube

TO-3PF

TO-220

TO-247

P4N150

W4N150

April 2008

Rev 6

1/16

www.st.com

12 3 4 5 6 7...16

中文翻译

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