Datasheet > STFU28N65M2

STFU28N65M2

更新时间： 2024-10-02 14:57:19

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道650 V、0.15 Ohm典型值、20 A MDmesh M2功率MOSFET，TO-220FP超窄引线封装

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STFU28N65M2 数据手册

STFU28N65M2

N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2

Power MOSFET in a TO-220FP ultra narrow leads package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max

I_D

STFU28N65M2

650 V

0.18 Ω

20 A



Extremely low gate charge

Excellent output capacitance (C_oss) profile

100% avalanche tested

Zener-protected

TO-220FP

ultra narrow leads

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

D(2)

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

G(1)

S(3)

AM15572v1_no_tab

Table 1: Device summary

Marking Package

Order code

Packaging

TO-220FP

STFU28N65M2

28N65M2

Tube

ultra narrow leads

November 2015

DocID027607 Rev 3

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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