Datasheet > STFU26N60M2

STFU26N60M2

更新时间： 2024-10-02 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	700K
描述
N沟道600 V、0.14 Ohm典型值、20 A MDmesh M2功率MOSFET，TO-220FP超窄引线封装

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STFU26N60M2 数据手册

STFU26N60M2

N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2

Power MOSFET in TO-220FP ultra narrow leads package

Datasheet - production data

Features

V_DS

T_Jmax

R_DS(on)

max.

Order code

I_D

P_TOT

STFU26N60M2

650 V

0.165 Ω

20 A

30 W



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

TO-220FP

ultra narrow leads

Applications



Switching applications

LCC converters, resonant converters

Figure 1: Internal schematic diagram

D(2)

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

G(1)

S(3)

AM15572v1_no_tab

Table 1: Device summary

Package

TO-220FP ultra narrow leads

Order code

Marking

26N60M2

Packing

STFU26N60M2

Tube

July 2017

DocID030891 Rev 1

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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