Datasheet > STB10NK60Z_08

STB10NK60Z_08

更新时间： 2024-02-18 17:11:05

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
19页	860K
描述
N-channel 650 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247

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中文翻译

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数据手册

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STB10NK60Z_08 数据手册

STB10NK60Z, STP10NK60Z

STW10NK60Z

N-channel 650 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET

Zener-protected I²PAK, D²PAK, TO-220, TO-220FP, TO-247

Features

R_DS(on)

max

Type

V_DSS

I_D

P_w

STB10NK60Z-1

STB10NK60Z

STP10NK60Z

600 V < 0.75 Ω 10 A 115 W

TO-247

TO-262

STP10NK60ZFP 600 V < 0.75 Ω 10 A 35 W

STW10NK60Z 600 V < 0.75 Ω 10 A 156 W

TO-263

■ Extremely high dv/dt capability

■ 100% avalanche tested

TO-220

TO-220FP

■ Gate charge minimized

■ Very good manufacturing reliability

Figure 1.

Internal schematic diagram

Application

■ Switching applications

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Table 1.

Device summary

Order codes

Marking

Package

I²PAK

Packaging

STB10NK60Z-1

STB10NK60ZT4

STP10NK60ZFP

STP10NK60Z

B10NK60Z

P10NK60ZFP

P10NK60Z

W10NK60Z

Tube

Tape & reel

Tube

D²PAK

TO-220FP

TO-220

Tube

STW10NK60Z

TO-247

Tube

November 2008

Rev 10

1/19

www.st.com

12 3 4 5 6 7...19

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