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STB11NK40Z PDF预览

STB11NK40Z

更新时间: 2024-11-25 22:10:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 581K
描述
N-CHANNEL 400V - 0.49ohm - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET

STB11NK40Z 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.73
配置:Single最大漏极电流 (Abs) (ID):9 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

STB11NK40Z 数据手册

 浏览型号STB11NK40Z的Datasheet PDF文件第2页浏览型号STB11NK40Z的Datasheet PDF文件第3页浏览型号STB11NK40Z的Datasheet PDF文件第4页浏览型号STB11NK40Z的Datasheet PDF文件第5页浏览型号STB11NK40Z的Datasheet PDF文件第6页浏览型号STB11NK40Z的Datasheet PDF文件第7页 
STP11NK40Z - STP11NK40ZFP  
STB11NK40Z  
N-CHANNEL 400V - 0.49- 9A TO-220/TO-220FP/D2PAK  
Zener-Protected SuperMESH™Power MOSFET  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP11NK40Z  
STP11NK40ZFP  
STB11NK40Z  
400 V < 0.55 Ω  
400 V < 0.55 Ω  
400 V < 0.55 Ω  
9 A  
9 A  
9 A  
110 W  
30 W  
110 W  
TYPICAL R (on) = 0.49 Ω  
3
DS  
2
1
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
TO-220  
TO-220FP  
3
1
2
D PAK  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established strip-  
based PowerMESH™ layout. In addition to pushing  
on-resistance significantly down, special care is tak-  
en to ensure a very good dv/dt capability for the  
most demanding applications. Such series comple-  
ments ST full range of high voltage MOSFETs in-  
cluding revolutionary MDmesh™ products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTORS AND PFC  
LIGHTING  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P11NK40Z  
PACKAGE  
PACKAGING  
TUBE  
STP11NK40Z  
STP11NK40ZFP  
STB11NK40ZT4  
TO-220  
P11NK40ZFP  
B11NK40Z  
TO-220FP  
TUBE  
2
TAPE & REEL  
D PAK  
April 2003  
1/12  

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