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STB10NK60ZT4 PDF预览

STB10NK60ZT4

更新时间: 2024-09-27 03:30:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
19页 409K
描述
N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET

STB10NK60ZT4 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:D2PAK包装说明:ROHS COMPLIANT, TO-263, D2PAK-3
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.65Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180075
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:D2PAK_STD_ST
Samacsys Released Date:2015-11-09 14:24:38Is Samacsys:N
雪崩能效等级(Eas):300 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:0.75 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):115 W最大脉冲漏极电流 (IDM):36 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB10NK60ZT4 数据手册

 浏览型号STB10NK60ZT4的Datasheet PDF文件第2页浏览型号STB10NK60ZT4的Datasheet PDF文件第3页浏览型号STB10NK60ZT4的Datasheet PDF文件第4页浏览型号STB10NK60ZT4的Datasheet PDF文件第5页浏览型号STB10NK60ZT4的Datasheet PDF文件第6页浏览型号STB10NK60ZT4的Datasheet PDF文件第7页 
STB10NK60Z/-1 - STP10NK60Z/FP  
STW10NK60Z  
N-CHANNEL 600V-0.65-10A - TO220/FP-D²/I²PAK-TO-247  
Zener-Protected SuperMESH™ MOSFET  
General features  
Package  
V
R
I
D
Type  
Pw  
DSS  
DS(on)  
STB10NK60Z  
600 V <0.75 Ω  
10 A  
10 A  
10 A  
10 A  
10 A  
115  
115  
35  
3
3
STB10NK60Z-1 600 V <0.75 Ω  
STP10NK60ZFP 600 V <0.75 Ω  
2
2
3
1
1
2
1
TO-220  
TO-220FP  
STP10NK60Z  
600 V <0.75 Ω  
115  
156  
TO-247  
STW10NK60Z 600 V <0.75 Ω  
3
1
TYPICAL R  
= 0.65 Ω  
DS(on)  
3
2
1
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
D²PAK  
I²PAK  
Internal schematic diagram  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEABILITY  
Description  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established  
strip-based PowerMESH™ layout. In addition to  
pushing on-resistance significantly down, special  
care is taken to ensure a very good dv/dt  
capability for the most demanding applications.  
Such series complements ST full range of high  
voltage  
MOSFETs  
including  
revolutionary  
MDmesh™ products.  
Applications  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTOR AND PFC  
LIGHTING  
Rev 1  
1/19  
July 2005  
www.st.com  
19  

STB10NK60ZT4 替代型号

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