STB1188Y

更新时间： 2024-01-22 09:15:26

品牌	Logo	应用领域
可天士 - KODENSHI		晶体小信号双极晶体管放大器
页数	文件大小	规格书
5页	290K
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中文翻译

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数据手册

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STB1188Y 数据手册

STB1188

PNP Silicon Transistor

Description

PIN Connection

 Medium power amplifier

Features

 P_C(Collector power dissipation)=1W

(Ceramic substrate of 250 ㎟×0.8t used)

 Low collector saturation voltage : V_CE(sat)=-0.5V (Typ.)

 Complementary pair with STD1766

SOT-89

Ordering Information

Type NO.

Marking

Package Code

YWW

STB1188

SOT-89

B1: Device code, YWW (Y : Year code, WW : Week code)

Absolute maximum ratings

(Ta=25C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

V_CBO

-40

V_CEO

V_EBO

I_C

-32

-5

-2

P_C

0.5

Collector power dissipation

P_C

Junction temperature

Storage temperature

T_J

150

C

T_stg

T_opr

-55~150

-40~125

Operating temperature range

: When mounted on ceramic substrate (250 ㎟×0.8t)

KSD-T5B022-002

12 3 4 5

中文翻译

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