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ST13005-1 PDF预览

ST13005-1

更新时间: 2024-11-08 21:53:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
8页 81K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

ST13005-1 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84最大集电极电流 (IC):4 A
配置:Single最小直流电流增益 (hFE):8
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):75 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

ST13005-1 数据手册

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ST13005  
STB13005-1  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
MEDIUM VOLTAGE CAPABILITY  
NPN TRANSISTORS  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
VERY HIGH SWITCHING SPEED  
THROUGH-HOLE I2PAK (TO-262) POWER  
PACKAGEIN TUBE (SUFFIX ”-1”)  
3
3
2
1
2
APPLICATIONS:  
1
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
TO-220  
I2PAK  
TO-262  
(Suffix ”-1”)  
SWITCH MODE POWER SUPPLIES  
DESCRIPTION  
The devices are is manufactured using high  
voltage Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
They use a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
V
700  
400  
V
9
V
4
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp < 5 ms)  
4
75  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/8  
January 1999  

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