ST13007N-A

更新时间： 2024-11-30 13:14:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
6页	71K
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中文翻译

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数据手册

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ST13007N-A 数据手册

ST13007

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

IMPROVED SPECIFICATION:

- LOWER LEAKAGECURRENT

- TIGHTER GAIN RANGE

- DC CURRENT GAIN PRESELECTION

- TIGHTER STORAGE TIME RANGE

HIGH VOLTAGE CAPABILITY

NPN TRANSISTOR

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLEOPERATION

■

VERY HIGH SWITCHING SPEED

FULLY CHARACTERIZED AT 125 ^oC

LARGE RBSOA

TO-220

APPLICATIONS

■

ELECTRONIC BALLASTSFOR

FLUORESCENT LIGHTING

■

SWITCH MODE POWER SUPPLIES

INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance

switching speeds.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CEV

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= -1.5V)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

700

400

I_CM

Collector Peak Current

I_B

Base Current

I_BM

Base Peak Current

Total Dissipation at T_c≤ 25 ^oC

P_tot

T_stg

T_j

^oC

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/6

July 1998

12 3 4 5 6

中文翻译

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