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ST13007NFP PDF预览

ST13007NFP

更新时间: 2024-11-29 22:23:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 78K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

ST13007NFP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
最大集电极电流 (IC):8 A配置:Single
最小直流电流增益 (hFE):5JESD-609代码:e3
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):33 W子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

ST13007NFP 数据手册

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ST13007N  
ST13007NFP  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
HIGH VOLTAGE CAPABILITY  
NPN TRANSISTOR  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS  
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
SWITCH MODE POWER SUPPLIES  
3
3
2
2
1
1
TO-220  
TO-220FP  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability.  
They use a Cellular Emitter structure to enhance  
switching speeds.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
ST13007N  
ST13007NFP  
VCEV  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
700  
400  
9
V
V
V
8
A
ICM  
IB  
Collector Peak Current  
Base Current  
16  
4
A
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current  
Total Dissipation at Tc 25 oC  
8
A
80  
33  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
March 1999  

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