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ST13005B PDF预览

ST13005B

更新时间: 2024-11-06 12:58:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
8页 272K
描述
4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, ROHS COMPLIANT PACKAGE-3

ST13005B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:5.76
Is Samacsys:N最大集电极电流 (IC):4 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):27JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ST13005B 数据手册

 浏览型号ST13005B的Datasheet PDF文件第2页浏览型号ST13005B的Datasheet PDF文件第3页浏览型号ST13005B的Datasheet PDF文件第4页浏览型号ST13005B的Datasheet PDF文件第5页浏览型号ST13005B的Datasheet PDF文件第6页浏览型号ST13005B的Datasheet PDF文件第7页 
ST13005  
STB13005-1  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
MEDIUM VOLTAGE CAPABILITY  
NPN TRANSISTORS  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
THROUGH-HOLE I2PAK (TO-262) POWER  
PACKAGE IN TUBE (SUFFIX ”-1”)  
3
3
2
1
2
APPLICATIONS:  
1
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
TO-220  
I2PAK  
TO-262  
SWITCH MODE POWER SUPPLIES  
(Suffix "-1")  
DESCRIPTION  
The devices are manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
They use a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
V
700  
400  
V
9
V
4
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp < 5 ms)  
4
75  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/8  
June 2001  

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