Datasheet > ST13005D

ST13005D

更新时间： 2024-11-09 20:54:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		局域网开关晶体管
页数	文件大小	规格书
12页	246K
描述
POWER TRANSISTOR

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中文翻译

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技术参数
数据手册

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ST13005D 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.76
最大集电极电流 (IC)：	4 A	集电极-发射极最大电压：	400 V
配置：	SINGLE	最小直流电流增益 (hFE)：	8
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

ST13005D 数据手册

ST13005

High voltage fast-switching NPN power transistor

Features

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Electronic ballast for fluorescent lighting

■ Switch mode power supplies

TO-220

Description

This device is manufactured using high voltage

multi epitaxial planar technology for high switching

speeds and high voltage capability. It uses a

cellular emitter structure with planar edge

termination to enhance switching speeds while

maintaining a wide RBSOA.

Figure 1.

Internal schematic diagram

Table 1.

Device summary

Order code

Marking⁽¹⁾

Package

Packaging

13005 C

13005 D

13005 E

13005 F

ST13005

TO-220

Tube

1. Product is pre-selected in DC current gain (group C, D, E and F). STMicroelectronics reserves the right to ship either

groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

February 2012

Doc ID 5262 Rev 9

1/12

www.st.com

12 3 4 5 6 7...12

中文翻译

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