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ST13007FP PDF预览

ST13007FP

更新时间: 2024-11-29 22:42:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
6页 70K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST13007FP 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220FP, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.79Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):8 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):36 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ST13007FP 数据手册

 浏览型号ST13007FP的Datasheet PDF文件第2页浏览型号ST13007FP的Datasheet PDF文件第3页浏览型号ST13007FP的Datasheet PDF文件第4页浏览型号ST13007FP的Datasheet PDF文件第5页浏览型号ST13007FP的Datasheet PDF文件第6页 
ST13007FP  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
NPN TRANSISTOR  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERIZED AT 125 oC  
LARGE RBSOA  
3
2
APPLICATIONS  
1
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
TO-220FP  
SWITCH MODE POWER SUPPLIES  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability.  
They use a Cellular Emitter structure to enhance  
switching speeds.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
700  
V
V
400  
9
V
8
A
ICM  
Collector Peak Current  
16  
A
IB  
Base Current  
4
A
IBM  
Base Peak Current  
8
36  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
June 1998  

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