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ST13007A PDF预览

ST13007A

更新时间: 2024-11-06 13:00:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 71K
描述
POWER TRANSISTOR

ST13007A 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.7Base Number Matches:1

ST13007A 数据手册

 浏览型号ST13007A的Datasheet PDF文件第2页浏览型号ST13007A的Datasheet PDF文件第3页浏览型号ST13007A的Datasheet PDF文件第4页浏览型号ST13007A的Datasheet PDF文件第5页浏览型号ST13007A的Datasheet PDF文件第6页 
ST13007  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
IMPROVED SPECIFICATION:  
- LOWER LEAKAGECURRENT  
- TIGHTER GAIN RANGE  
- DC CURRENT GAIN PRESELECTION  
- TIGHTER STORAGE TIME RANGE  
HIGH VOLTAGE CAPABILITY  
NPN TRANSISTOR  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
3
2
1
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERIZED AT 125 oC  
LARGE RBSOA  
TO-220  
APPLICATIONS  
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
SWITCH MODE POWER SUPPLIES  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability.  
They use a Cellular Emitter structure to enhance  
switching speeds.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
700  
V
V
400  
9
V
8
A
ICM  
Collector Peak Current  
16  
A
IB  
Base Current  
4
A
IBM  
Base Peak Current  
Total Dissipation at Tc 25 oC  
8
80  
A
Ptot  
Tstg  
Tj  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
July 1998  

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