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ST13007D PDF预览

ST13007D

更新时间: 2024-11-29 04:02:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
7页 215K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST13007D 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:1.7Is Samacsys:N
最大集电极电流 (IC):8 A集电极-发射极最大电压:400 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):80 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ST13007D 数据手册

 浏览型号ST13007D的Datasheet PDF文件第2页浏览型号ST13007D的Datasheet PDF文件第3页浏览型号ST13007D的Datasheet PDF文件第4页浏览型号ST13007D的Datasheet PDF文件第5页浏览型号ST13007D的Datasheet PDF文件第6页浏览型号ST13007D的Datasheet PDF文件第7页 
ST13007D  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
IMPROVED SPECIFICATION:  
- LOWER LEAKAGE CURRENT  
- TIGHTER GAIN RANGE  
- DC CURRENT GAIN PRESELECTION  
- TIGHTER STORAGE TIME RANGE  
HIGH VOLTAGE CAPABILITY  
INTEGRATED FREE-WHEELING DIODE  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
3
2
1
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERIZED AT 125 oC  
LARGE RBSOA  
TO-220  
APPLICATIONS  
UP TO 120W ELECTRONIC  
TRANSFORMERS FOR HALOGEN LAMPS  
SWITCH MODE POWER SUPPLIES  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability.  
It uses a Cellular Emitter structure to enhance  
switching speeds.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
700  
V
V
400  
9
V
8
A
ICM  
Collector Peak Current  
16  
A
IB  
Base Current  
4
A
IBM  
Base Peak Current  
8
80  
A
o
Ptot  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
April 2003  

ST13007D 替代型号

型号 品牌 替代类型 描述 数据表
ST13007DFP STMICROELECTRONICS

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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