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ST13003_01 PDF预览

ST13003_01

更新时间: 2024-11-12 04:02:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 225K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST13003_01 数据手册

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ST13003  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
MEDIUM VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
1
2
SWITCH MODE POWER SUPPLIES  
3
DESCRIPTION  
SOT-32  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Value  
700  
Unit  
V
V
V
VCEO  
400  
VEBO  
Emitter-Base Voltage  
BVEBO  
(IC = 0, IB = 0.75 A, tp < 10µs, Tj < 150oC)  
IC  
ICM  
IB  
Collector Current  
1.5  
3
A
A
Collector Peak Current (tp < 5 ms)  
Base Current  
0.75  
1.5  
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp < 5 ms)  
A
o
Total Dissipation at Tc = 25 C  
40  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
August 2001  

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